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	Zobrazování nevodivých vzorků pomocí nízkoenergiových zpětně odražených elektronů v SEM Wandrol, Petr Article deals with the problems of imaging of non-conductive samples in the SEM that are caused mainly by charging. Use of the low primary beam energy and the observation by means of backscattered electrons are proposed as methods of suppression of charging artifacts in the image. Newly developed detector of backscattered electrons for the low energy SEM is described and images of uncoated non-conductive samples without charging artifacts taken by this detector are presented. Detailed record
	Design of low energy SEM Vlček, Ivan Paper briefly describes main features of proposed low-energy electron scanning microscope. Detailed record
	Quantitative study of density of the dopant configuration in a semiconductor by emission of secondary electrons Mika, Filip The topic of the work is study of one technological layer of semiconductor structure with delimited doped areas by scanning microscope with slow electrons in both ultra-high vacuum and standard vacuum conditions. The aim is to find optimum conditions of imaging of doped areas and to obtain dependence values between the contrast and density of the addition. Detailed record
	Tvorba kontrastu při zobrazení dopovaného polovodiče v nízkoenergiovém REM Mika, Filip ; Frank, Luděk Functional details of semiconductor structures keep decreasing in size. Among the structure elements the locally doped patterns play crucial role so that tools are needed for their observation. For fast diagnosis and quality check of the semiconductor structures the scanning electron microscope is useful because of its wide range of magnification, availability of different signal modes, speed of data acquisition and nondestructive nature of the technique in general, especially at low voltage operations. The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping Detailed record

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